Failure mechanisms of discrete protection device subjected to repetitive electrostatic discharges (ESD)

Failure mechanisms of discrete protection device subjected to repetitive electrostatic discharges (ESD)

High reliability electronic devices need to sustain thousand of Electrostatic Discharge (ESD) stresses during their lifetime. In this paper, it is demonstrated that repetitive ESD stresses on a protection device such as a bidirectional diode induce progressive defects into the silicon bulk. With “Sirtl etch” failure analysis technique, the defects could be localized quite precisely at the perip...

Understanding the failure mechanisms of protection diodes during system level ESD : towards repetitive stresses robustness

— In electronic systems the ever-increasing level of integration is paced by component scaling. Consequently, system level protection improvements in electrostatic discharge (ESD) reliability during a device's lifetime is mandatory. To this end we have investigated bidirectional system level ESD protection diodes that have been subjected to repetitive HMM stresses. Our goal was to develop robus...

Active Electrostatic Discharge (ESD) Device for On-Chip ESD Protection in Sub-Quarter-Micron Complementary Metal-Oxide Semiconductor (CMOS) Process

A novel electrostatic discharge (ESD) protection device with a threshold voltage of 0V for complementary metal-oxide semiconductor (CMOS) integrated circuits in sub-quarter-micron CMOS technology is proposed. Quite different to the traditional ESD protection devices, such an active ESD device is originally standing in its turn-on state when the IC is zapped under ESD events. Therefore, such an ...

On-Chip Structure for Electrostatic Discharge (ESD) Protection [DIV]

Dummy-Gate Structure to Improve Turn-on Speed of Silicon-Controlled Rectifier (SCR) Device for Effective Electrostatic Discharge (ESD) Protection

Turn-on speed is the main concern for on-chip electrostatic discharge (ESD) protection device, especially in deep submicron complementary metal-oxide semiconductors (CMOS) processes with ultra-thin gate oxide. A novel dummy-gate-blocking silicon-controlled rectifier (SCR) device with substrate-triggered technique is proposed to improve the turn-on speed of SCR device for using in on-chip ESD pr...